MBR735【PDF 1/5 页】DIODE SCHOTTKY 7.5A 35V TO-220AC

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MBR735 - MBR760 — Schottky Rectifiers

? 2001 Fairchild Semiconductor Corporation

www.fairchildsemi.com

MBR735 - MBR760 Rev. 1.1.0 1

June 2013

MBR735 - MBR760

Schottky Rectifiers

Features

? Low Power Loss, High Efficiency

? High Surge Capacity

? Metal Silicon Junction, Majority Carrier Conduction

? High Current Capacity, Low Forward-Voltage Drop

? Guard Ring for Over-Voltage Protection (OVP)

Applications

? Low-Voltage, High-Frequency Inverters

Free Wheeling and Polarity Protection

Absolute Maximum Ratings

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-

ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-

tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The

absolute maximum ratings are stress ratings only. Values are at TA

= 25°C unless otherwise noted.

Thermal Characteristics

Symbol Parameter

Value

Units

735 745 750 760

VRRM

Maximum Repetitive Reverse Voltage 35 45 50 60 V

IF(AV)

Average Rectified Forward Current 7.5 A

IFSM

Non-Repetitive Peak Forward Surge Current

8.3 ms Single Half-Sine-Wave

150 A

Tstg

Storage Temperature Range -65 to +175

°C

Operating Junction Temperature -65 to +150

°C

Symbol Parameter Value Units

Power Dissipation 2.0 W

RθJA

Thermal Resistance, Junction to Ambient 60

°C/W

RθJL

Thermal Resistance, Junction to Lead 3.0

°C/W

TO-220AC

PIIN2

PIIN1

Case

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